Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): | -120V |
|
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): | −100V |
|
Other/collector continuous output current ICCollector Current (IC): | -1A |
|
Other/Cut off Frequency fTTransmission Frequency (fT): | 120MHz |
|
Other/DC current gain hFEDC Current Gain (hFE): | 140~400 |
|
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: | −200mV/-0.2V |
|
Other/dissipated power PcPoWer Dissipation: | 900mW/0.9W |
|
Other/Specification PDF: | __ |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | SPT |
100V, 1A PNP low VCEsat (BISS) transistor
|
||
|
|
Philips | 功能相似 |
100V, 1A PNP low VCEsat (BISS) transistor
|
|||
PBSS9110T
|
NXP | 功能相似 | SOT-23 |
100V, 1A PNP low VCEsat (BISS) transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review