Chip AI consultant
Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 300 mW |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 125 |
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Technical parameters/DC current gain (hFE): | 150 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | Power Management, Industrial, Signal Processing, Communications & Networking, Motor Drive & Control, Automotive, Lighting |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FMMT593
|
Diodes | 功能相似 | SOT-23 |
单晶体管 双极, PNP, 100 V, 150 MHz, 500 mW, -1 A, 100 hFE
|
||
PBSS9110T,215
|
Nexperia | 功能相似 | SOT-23-3 |
PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
|
||
PBSS9110T,215
|
NXP | 功能相似 | SOT-23-3 |
PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
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