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Model PBSS9110T,215
Description PNP Transistors, NXP series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, NXP Semiconductors
Product QR code
Brand: NXP
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.41  yuan 0.41yuan
20+:
$ 0.5508
50+:
$ 0.5100
100+:
$ 0.4896
300+:
$ 0.4733
500+:
$ 0.4610
1000+:
$ 0.4529
5000+:
$ 0.4447
10000+:
$ 0.4366
Quantity
20+
50+
100+
300+
500+
Price
$0.5508
$0.5100
$0.4896
$0.4733
$0.4610
Price $ 0.5508 $ 0.5100 $ 0.4896 $ 0.4733 $ 0.4610
Start batch production 20+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3243) Minimum order quantity(20)
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Technical parameters/frequency: 100 MHz

Technical parameters/number of pins: 3

Technical parameters/polarity: PNP

Technical parameters/dissipated power: 300 mW

Technical parameters/breakdown voltage (collector emitter): 100 V

Technical parameters/maximum allowable collector current: 1A

Technical parameters/minimum current amplification factor (hFE): 150 @500mA, 5V

Technical parameters/Maximum current amplification factor (hFE): 150 @1mA, 5V

Technical parameters/rated power (Max): 480 mW

Technical parameters/DC current gain (hFE): 150

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 480 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/length: 3 mm

External dimensions/width: 1.4 mm

External dimensions/height: 1 mm

External dimensions/packaging: SOT-23-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Power Management, Industrial, Signal Processing, Communications & Networking, Motor Drive & Control, Automotive, Lighting

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS9110T PBSS9110T NXP 功能相似 SOT-23
100V, 1A PNP low VCEsat (BISS) transistor

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