Technical parameters/rated voltage (DC): | 240 V |
|
Technical parameters/rated current: | 200 mA |
|
Technical parameters/drain source resistance: | 10.0 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 350 mW |
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Technical parameters/drain source voltage (Vds): | 240 V |
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Technical parameters/Leakage source breakdown voltage: | 240 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 200 mA |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-92 |
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Dimensions/Packaging: | TO-92 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN5325K1-G
|
Supertex | 功能相似 | SOT-23-3 |
晶体管, MOSFET, DMOS, N沟道, 150 mA, 250 V, 7 ohm, 10 V, 2 V
|
||
VN2410L-G
|
Microchip | 功能相似 | TO-92-3 |
Supertex N 通道增强型模式 MOSFET 晶体管 Microchip Supertex 系列 N 通道增强型模式(常闭)DMOS FET 晶体管适合各种需要低阈值电压、高击穿电压、高输入阻抗,低输入电容和快速切换速度的开关和放大应用。 ### MOSFET 晶体管,Microchip
|
||
VN2410L-G
|
Supertex | 功能相似 | TO-92-3 |
Supertex N 通道增强型模式 MOSFET 晶体管 Microchip Supertex 系列 N 通道增强型模式(常闭)DMOS FET 晶体管适合各种需要低阈值电压、高击穿电压、高输入阻抗,低输入电容和快速切换速度的开关和放大应用。 ### MOSFET 晶体管,Microchip
|
||
VN2410LZL1G
|
ON Semiconductor | 功能相似 | TO-92-3 |
小信号N沟道TO-92-3封装场效应管
|
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