Technical parameters/rated voltage (DC): 240 V
Technical parameters/rated current: 200 mA
Technical parameters/drain source resistance: 10.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350mW (Tc)
Technical parameters/input capacitance: 125 pF
Technical parameters/drain source voltage (Vds): 240 V
Technical parameters/leakage source breakdown voltage: 240 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/Input capacitance (Ciss): 125pF @25V(Vds)
Technical parameters/dissipated power (Max): 350mW (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN5325K1-G
|
Supertex | 功能相似 | SOT-23-3 |
Trans MOSFET N-CH 250V 0.15A 3Pin SOT-23
|
||
VN2410L-G
|
Microchip | 功能相似 | TO-92-3 |
Trans MOSFET N-CH 240V 0.19A 3Pin TO-92
|
||
VN2410L-G
|
Supertex | 功能相似 | TO-92-3 |
Trans MOSFET N-CH 240V 0.19A 3Pin TO-92
|
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