Technical parameters/rated power: 0.36 W
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 360 mW
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 150 mA
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN5325K1-G
|
Supertex | 功能相似 | SOT-23-3 |
晶体管, MOSFET, DMOS, N沟道, 150 mA, 250 V, 7 ohm, 10 V, 2 V
|
||
VN2410LZL1G
|
ON Semiconductor | 功能相似 | TO-92-3 |
小信号N沟道TO-92-3封装场效应管
|
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