Technical parameters/rated voltage (DC): | 75.0 V |
|
Technical parameters/rated current: | 82.0 A |
|
Technical parameters/product series: | IRF2807 |
|
Technical parameters/drain source voltage (Vds): | 75.0 V |
|
Technical parameters/Leakage source breakdown voltage: | 75.0V (min) |
|
Technical parameters/Continuous drain current (Ids): | 82.0 A |
|
Technical parameters/rise time: | 64.0 ns |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHP75NQ08T,127
|
NXP | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 75V 75A 3Pin(3+Tab) TO-220AB Rail
|
||
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Nexperia | 功能相似 | 3 |
Trans MOSFET N-CH 75V 75A 3Pin(3+Tab) TO-220AB Rail
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||
STP140NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP140NF75 晶体管, MOSFET, N沟道, 120 A, 75 V, 7.5 mohm, 10 V, 4 V
|
||
STP75NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
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