Technical parameters/dissipated power: | 157 W |
|
Technical parameters/drain source voltage (Vds): | 75 V |
|
Technical parameters/rise time: | 36 ns |
|
Technical parameters/Input capacitance (Ciss): | 1985pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 157 W |
|
Technical parameters/descent time: | 26 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 157W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Rail, Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP032N08
|
ON Semiconductor | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDP032N08 晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0025 ohm, 10 V, 3.5 V
|
||
FDP047N08
|
ON Semiconductor | 功能相似 | TO-220-3 |
PowerTrench® N 通道 MOSFET，超过 60A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
IRF2807
|
International Rectifier | 功能相似 | TO-220 |
Trans MOSFET N-CH 80V 82A 3Pin (3+Tab) TO-220AB
|
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