Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 57.0 A |
|
Technical parameters/drain source resistance: | 23.0 mΩ (max) |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 200 W |
|
Technical parameters/product series: | IRF3710S |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Leakage source breakdown voltage: | 100V (min) |
|
Technical parameters/Continuous drain current (Ids): | 57.0 A |
|
Technical parameters/rise time: | 58.0 ns |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-2 |
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Dimensions/Packaging: | TO-263-2 |
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Other/Product Lifecycle: | End of Life |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3710SPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF3710SPBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
|
||
IRF3710SPBF
|
IFC | 功能相似 |
INFINEON IRF3710SPBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
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|||
IRF3710STRLPBF
|
International Rectifier | 功能相似 | TO-263-3 |
N沟道,100V,57A,23mΩ@10V
|
||
IRF3710STRLPBF
|
IFC | 功能相似 |
N沟道,100V,57A,23mΩ@10V
|
|||
IRF3710STRLPBF
|
Infineon | 功能相似 | TO-263-3 |
N沟道,100V,57A,23mΩ@10V
|
||
IRF3710STRRPBF
|
Infineon | 功能相似 | TO-263-3 |
N 沟道 100 V 200 W 130 nC 功率 Mosfet 表面贴装 - D2PAK-3
|
||
STB35NF10T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
||
STB40NF10LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB40NF10LT4 晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
|
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