Technical parameters/drain source resistance: | 7.30 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.80 W |
|
Technical parameters/breakdown voltage of gate source: | ±8.00 V |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO |
|
Dimensions/Packaging: | SO |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7485DP-T1-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET P-CH 20V 12.5A PPAK SO-8
|
||
SI7485DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 20V 20A 5W 7.3mohm @ 4.5V
|
||
SI7485DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SO-8 |
MOSFET 20V 20A 5W 7.3mohm @ 4.5V
|
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