Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/Continuous drain current (Ids): -20.0 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7485DP-T1
|
Vishay Semiconductor | 功能相似 | SO |
Small Signal Field-Effect Transistor, 12.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPACK, SOP-8
|
||
|
|
Visay | 功能相似 |
Small Signal Field-Effect Transistor, 12.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPACK, SOP-8
|
|||
SI7485DP-T1
|
Vishay Siliconix | 功能相似 | SO |
Small Signal Field-Effect Transistor, 12.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPACK, SOP-8
|
||
SI7485DP-T1-E3
|
Vishay Semiconductor | 完全替代 | SO |
MOSFET P-CH 20V 12.5A PPAK SO-8
|
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