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Model SI7485DP-T1-GE3
Description MOSFET 20V 20A 5W 7.3mohm @ 4.5V
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Brand: Vishay Siliconix
Packaging SO-8
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8920) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.8W (Ta)

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/dissipated power (Max): 1.8W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7485DP-T1 SI7485DP-T1 Vishay Semiconductor 功能相似 SO
Small Signal Field-Effect Transistor, 12.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPACK, SOP-8
SI7485DP-T1 SI7485DP-T1 Visay 功能相似
Small Signal Field-Effect Transistor, 12.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPACK, SOP-8
SI7485DP-T1 SI7485DP-T1 Vishay Siliconix 功能相似 SO
Small Signal Field-Effect Transistor, 12.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWERPACK, SOP-8
PDF
SI7485DP-T1-E3 SI7485DP-T1-E3 Vishay Semiconductor 完全替代 SO
MOSFET P-CH 20V 12.5A PPAK SO-8
PDF

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