Technical parameters/drain source resistance: | 160 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 2.00 A |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | Non-Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2308BDS-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-23 |
TRANSISTOR 1900mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3Pin, FET General Purpose Small Signal
|
||
SI2308BDS-T1-GE3
|
VISHAY | 功能相似 | SOT-23-3 |
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W
|
||
SI2308BDS-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W
|
||
SI2308BDS-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 192mohm, Id 2.3A, SOT-23, Pd 1.66W
|
||
SI2308DS
|
Vishay Siliconix | 类似代替 | SOT-23 |
MOSFET, N, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 60V; On...
|
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