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Model SI4982DY-T1-E3
Description Trans MOSFET N-CH 100V 2.6A 8Pin SOIC N T/R
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8360) Minimum order quantity(20)
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Technical parameters/drain source resistance:

0.13 Ω

 

Technical parameters/polarity:

Dual N-Channel

 

Technical parameters/dissipated power:

2 W

 

Technical parameters/threshold voltage:

2 V

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

2.60 A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4982DY SI4982DY Visay 功能相似
MOSFET 100V 2.6A 2W
PDF
SI4982DY-T1 SI4982DY-T1 Vishay Semiconductor 类似代替 SO
Power Field-Effect Transistor, 2.6A I(D), 100V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
SI4982DY-T1 SI4982DY-T1 Vishay Siliconix 类似代替 SO
Power Field-Effect Transistor, 2.6A I(D), 100V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PDF

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