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Model SI4982DY-T1
Description Power Field-Effect Transistor, 2.6A I(D), 100V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Brand: Vishay Siliconix
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5803) Minimum order quantity(1)
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Technical parameters/drain source resistance: 150 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.00 W

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 2.60 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4982DY SI4982DY Visay 功能相似
MOSFET 100V 2.6A 2W
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SI4982DY-T1-E3 SI4982DY-T1-E3 Vishay Semiconductor 类似代替 SOIC-8
Transistor Polarity: Dual N Channel
SI4982DY-T1-E3 SI4982DY-T1-E3 Vishay Intertechnology 类似代替 SOIC-8
Transistor Polarity: Dual N Channel
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SI4982DY-T1-E3 SI4982DY-T1-E3 Vishay Siliconix 类似代替 SO
Transistor Polarity: Dual N Channel
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