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Model SI4982DY-T1
Description 双N沟道100 -V （D -S ）的MOSFET Dual N-Channel 100-V (D-S) MOSFET
Product QR code
Brand: Vishay Semiconductor
Packaging SO
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6677) Minimum order quantity(1)
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Technical parameters/drain source resistance:

150 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.00 W

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

2.60 A

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SO

 

Dimensions/Packaging:

SO

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4982DY SI4982DY Visay 功能相似
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SI4982DY-T1-E3 SI4982DY-T1-E3 Vishay Intertechnology 类似代替 SOIC-8
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