Technical parameters/drain source resistance: | 0.088 Ω |
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Technical parameters/polarity: | Dual N-Channel |
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Technical parameters/dissipated power: | 1.4 W |
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Technical parameters/threshold voltage: | 3.1 V |
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Technical parameters/drain source voltage (Vds): | 150 V |
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Technical parameters/rise time: | 36 ns |
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Technical parameters/descent time: | 50 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1400 mW |
|
Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | PowerPAKSO-8 |
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Dimensions/Width: | 5.15 mm |
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Dimensions/Height: | 1.04 mm |
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Dimensions/Packaging: | PowerPAKSO-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7956DP-T1-E3
|
Vishay Siliconix | 完全替代 | SO-8 |
Transistor MOSFET N-CH 150V 2.6A 8Pin PowerPAK SO T/R
|
||
SI7956DP-T1-E3
|
VISHAY | 完全替代 | SO-8 |
Transistor MOSFET N-CH 150V 2.6A 8Pin PowerPAK SO T/R
|
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