Technical parameters/drain source resistance: 105 mΩ
Technical parameters/polarity: Dual N
Technical parameters/dissipated power: 1.4 W
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 2.6A
Technical parameters/rise time: 36 ns
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1400 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7956DP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAKSO-8 |
MOSFET N-CH D-S 150V 8-SOIC
|
||
SI7956DP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET N-CH D-S 150V 8-SOIC
|
||
SI7956DP-T1-GE3
|
VISHAY | 完全替代 | PowerPAKSO-8 |
MOSFET N-CH D-S 150V 8-SOIC
|
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