Technical parameters/polarity: Dual N-Channel
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 4.10 A
Technical parameters/rated power (Max): 1.4 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7956DP-T1-GE3
|
Vishay Semiconductor | 完全替代 | PowerPAKSO-8 |
MOSFET N-CH D-S 150V 8-SOIC
|
||
SI7956DP-T1-GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET N-CH D-S 150V 8-SOIC
|
||
SI7956DP-T1-GE3
|
VISHAY | 完全替代 | PowerPAKSO-8 |
MOSFET N-CH D-S 150V 8-SOIC
|
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