Technical parameters/frequency: | 100 MHz |
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Technical parameters/number of pins: | 6 |
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Technical parameters/dissipated power: | 0.2 W |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/minimum current amplification factor (hFE): | 120 @1mA, 6V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/DC current gain (hFE): | 120 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SC-70-6 |
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Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SC-70-6 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 类似代替 |
PUMT1 PNP+PNP复合三极管 -50V -0.1A HEF=120 SOT363 标记F1F 用于开关/数字电路
|
|||
PUMT1
|
UTC | 类似代替 | SOT-363 |
PUMT1 PNP+PNP复合三极管 -50V -0.1A HEF=120 SOT363 标记F1F 用于开关/数字电路
|
||
PUMT1
|
Nexperia | 类似代替 | UMT |
PUMT1 PNP+PNP复合三极管 -50V -0.1A HEF=120 SOT363 标记F1F 用于开关/数字电路
|
||
PUMT1
|
NXP | 类似代替 | TSSOP-363 |
PUMT1 PNP+PNP复合三极管 -50V -0.1A HEF=120 SOT363 标记F1F 用于开关/数字电路
|
||
PUMT1,115
|
Nexperia | 类似代替 | SC-70-6 |
Nexperia PUMT1,115, 双 PNP 晶体管, 100 mA, Vce=40 V, HFE:120, 100 MHz, 6引脚 UMT封装
|
||
PUMT1,115
|
NXP | 类似代替 | TSSOP-6 |
Nexperia PUMT1,115, 双 PNP 晶体管, 100 mA, Vce=40 V, HFE:120, 100 MHz, 6引脚 UMT封装
|
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