Technical parameters/frequency: 100 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSSOP-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSSOP-6
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Philips | 类似代替 |
PUMT1 PNP+PNP复合三极管 -50V -0.1A HEF=120 SOT363 标记F1F 用于开关/数字电路
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PUMT1
|
UTC | 类似代替 | SOT-363 |
PUMT1 PNP+PNP复合三极管 -50V -0.1A HEF=120 SOT363 标记F1F 用于开关/数字电路
|
||
PUMT1
|
Nexperia | 类似代替 | UMT |
PUMT1 PNP+PNP复合三极管 -50V -0.1A HEF=120 SOT363 标记F1F 用于开关/数字电路
|
||
PUMT1
|
NXP | 类似代替 | TSSOP-363 |
PUMT1 PNP+PNP复合三极管 -50V -0.1A HEF=120 SOT363 标记F1F 用于开关/数字电路
|
||
PUMT1,115
|
Nexperia | 类似代替 | SC-70-6 |
Nexperia PUMT1,115, 双 PNP 晶体管, 100 mA, Vce=40 V, HFE:120, 100 MHz, 6引脚 UMT封装
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PUMT1,115
|
NXP | 类似代替 | TSSOP-6 |
Nexperia PUMT1,115, 双 PNP 晶体管, 100 mA, Vce=40 V, HFE:120, 100 MHz, 6引脚 UMT封装
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