Technical parameters/access time: | 120 ns |
|
Technical parameters/memory capacity: | 1000000 B |
|
Technical parameters/operating temperature (Max): | 70 ℃ |
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Technical parameters/operating temperature (Min): | 0 ℃ |
|
Technical parameters/power supply voltage: | 4.75V ~ 5.5V |
|
Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 4.75 V |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | DIP |
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Dimensions/Length: | 43.18 mm |
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Dimensions/Width: | 18.8 mm |
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Dimensions/Height: | 9.52 mm |
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Dimensions/Packaging: | DIP |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Maxim Integrated | 功能相似 | DIP-32 |
IC NVSRAM 1Mbit 120NS 32DIP
|
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