Technical parameters/rated current: | 20 mA |
|
Technical parameters/breakdown voltage of gate source: | 25 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Physical parameters/weight: | 0.003215970116 kg |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMBFJ308
|
NXP | 功能相似 | SOT-23-3 |
N-channel silicon field-effect transistors
|
||
SST308
|
Vishay Semiconductor | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3Pin
|
||
SST308
|
Calogic | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, SOT-23, 3Pin
|
||
SST309
|
Vishay Semiconductor | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3
|
||
SST309
|
VISHAY | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3
|
||
SST309
|
Micross | 功能相似 | SOT-23 |
RF Small Signal Field-Effect Transistor, 1Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3
|
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