Technical parameters/rated current: 10.0 mA
Technical parameters/drain source resistance: 35.0 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/Continuous drain current (Ids): 60.0 mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Packaging Methods: Can
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ310LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBFJ310LT1G 晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
|
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|
Motorola | 功能相似 |
ON SEMICONDUCTOR MMBFU310LT1G 晶体管, JFET, JFET, 25 V, 24 mA, 60 mA, 6 V, SOT-23, JFET
|
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