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Model NTD2955

Description -0.4A, -20V power MOSFET

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

5+:

$ 3.2130

25+:

$ 2.9750

50+:

$ 2.8084

100+:

$ 2.7370

500+:

$ 2.6894

2500+:

$ 2.6299

5000+:

$ 2.6061

10000+:

$ 2.5704

Price	$ 3.2130	$ 2.9750	$ 2.8084	$ 2.7370	$ 2.6894
Start batch production	5+	25+	50+	100+	500+

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Technical parameters/rated voltage (DC):	-60.0 V
Technical parameters/rated current:	-12.0 A
Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	155 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	55 W
Technical parameters/threshold voltage:	4 V
Technical parameters/Input capacitance:	750 pF
Technical parameters/gate charge:	30.0 nC
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Leakage source breakdown voltage:	60 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	12.0 A
Technical parameters/rise time:	45 ns
Technical parameters/descent time:	48 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	55 ℃
Encapsulation parameters/installation method:	Surface Mount
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.38 mm
Dimensions/Packaging:	TO-252-3
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Contains Lead

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	NTD2955G	ON Semiconductor	类似代替	TO-252-3	ON SEMICONDUCTOR NTD2955G 晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V	PDF
	NTD2955T4G	ON Semiconductor	类似代替	TO-252-3	ON SEMICONDUCTOR NTD2955T4G 晶体管, MOSFET, P沟道, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V	PDF