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Model NTD2955G
Description ON SEMICONDUCTOR NTD2955G Transistor, MOSFET, P-channel, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
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Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.48  yuan 1.48yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6374) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-60.0 V

 

Technical parameters/rated current:

-12.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.155 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

55 W

 

Technical parameters/threshold voltage:

2.8 V

 

Technical parameters/Input capacitance:

750 pF

 

Technical parameters/gate charge:

30.0 nC

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

12.0 A

 

Technical parameters/rise time:

45 ns

 

Technical parameters/Input capacitance (Ciss):

750pF @25V(Vds)

 

Technical parameters/rated power (Max):

55 W

 

Technical parameters/descent time:

48 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

55 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Motor Drive & Control, Power Management, Power Management, Motor Drive & Control, Mot

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTD2955T4G NTD2955T4G ON Semiconductor 类似代替 TO-252-3
ON SEMICONDUCTOR NTD2955T4G 晶体管, MOSFET, P沟道, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
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