Technical parameters/number of pins: | 6 |
|
Technical parameters/drain source resistance: | 0.028 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 4 W |
|
Technical parameters/threshold voltage: | 2 V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Input capacitance (Ciss): | 514pF @15V(Vds) |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 4000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | TSOP |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | TSOP |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Automotive, Power Management, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ3456BEV-T1-GE3
|
Vishay Intertechnology | 功能相似 | TSOP-6 |
MOSFET N-CH 30V 7.8A 6TSOP
|
||
SQ3456BEV-T1-GE3
|
Vishay Semiconductor | 功能相似 | TSOP-6 |
MOSFET N-CH 30V 7.8A 6TSOP
|
||
SQ3456BEV-T1_GE3
|
Vishay Semiconductor | 类似代替 | TSOP-6 |
MOSFET N-CH 30V 7.8A 6TSOP
|
||
SQ3456BEV-T1_GE3
|
VISHAY | 类似代替 | TSOP-6 |
MOSFET N-CH 30V 7.8A 6TSOP
|
||
SQ3456BEV-T1_GE3
|
Vishay Siliconix | 类似代替 | TSOT-23-6 |
MOSFET N-CH 30V 7.8A 6TSOP
|
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