Technical parameters/dissipated power: 4 W
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 370pF @15V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 4W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3.05 mm
External dimensions/width: 1.65 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ3456BEV-T1-GE3
|
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SQ3456BEV-T1-GE3
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Vishay Semiconductor | 功能相似 | TSOP-6 |
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SQ3456EV-T1-GE3
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SQ3456EV-T1-GE3
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Vishay Siliconix | 类似代替 | TSOP |
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SQ3456EV-T1-GE3
|
VISHAY | 类似代替 | TSOP-6 |
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|
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