Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 800 V |
|
Technical parameters/Maximum allowable collector current: | 10A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-247 |
|
Dimensions/Packaging: | TO-247 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU1008
|
Vishay Semiconductor | 功能相似 | CASE BU |
8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218
|
||
BU1008
|
Diodes | 功能相似 |
8A, 700V, NPN, Si, POWER TRANSISTOR, TO-218
|
|||
BU2508A
|
NXP | 功能相似 | SOT-93 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
||
BU2515AF
|
NXP | 功能相似 | TO-247 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
||
|
|
Philips | 功能相似 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
|||
BU2520AF
|
NXP | 功能相似 | TO-247 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
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