Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 800 V
Technical parameters/maximum allowable collector current: 9A
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU2515AF
|
NXP | 功能相似 | TO-247 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
||
|
|
Philips | 功能相似 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
|||
BU2520AF
|
NXP | 功能相似 | TO-247 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
||
|
|
Philips | 功能相似 | - |
Silicon Diffused Power Transistor
|
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