Technical parameters/number of output interfaces: | 2 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/dissipated power: | 625 mW |
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Technical parameters/descent time (Max): | 55 ns |
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Technical parameters/rise time (Max): | 55 ns |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Technical parameters/power supply voltage (Max): | 20 V |
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Technical parameters/power supply voltage (Min): | 6 V |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC |
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Dimensions/Packaging: | SOIC |
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Physical parameters/operating temperature: | -40℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Automotive, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS4427SPBF
|
Infineon | 完全替代 | SOIC-8 |
MOSFET 和 IGBT 栅极驱动器,半桥,Infineon Infineon 系列高电压端和低电压端半桥 MOSFET 和 IGBT 栅极驱动器 IC 栅极驱动电源范围从 6 V 到 20 V CMOS 施密特触发器输入 两个独立的栅极驱动器 匹配的传播延迟,用于两个通道 输出相位,带输入 无铅,符合 RoHS ### MOSFET 和 IGBT 驱动器,Infineon (International Rectifier)
|
||
IRS4427SPBF
|
International Rectifier | 完全替代 | SOIC-8 |
MOSFET 和 IGBT 栅极驱动器,半桥,Infineon Infineon 系列高电压端和低电压端半桥 MOSFET 和 IGBT 栅极驱动器 IC 栅极驱动电源范围从 6 V 到 20 V CMOS 施密特触发器输入 两个独立的栅极驱动器 匹配的传播延迟,用于两个通道 输出相位,带输入 无铅,符合 RoHS ### MOSFET 和 IGBT 驱动器,Infineon (International Rectifier)
|
||
IRS4427STRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRS4427STRPBF 芯片, 场效应管, MOSFET/晶体管, IGBT 驱动器, 低压侧, SOT-23-5 新
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