Technical parameters/rise/fall time: | 25 ns |
|
Technical parameters/number of output interfaces: | 2 |
|
Technical parameters/number of pins: | 8 |
|
Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/descent time (Max): | 55 ns |
|
Technical parameters/rise time (Max): | 55 ns |
|
Technical parameters/operating temperature (Max): | 125 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Technical parameters/power supply voltage: | 6V ~ 20V |
|
Technical parameters/power supply voltage (Max): | 20 V |
|
Technical parameters/power supply voltage (Min): | 6 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 4.98 mm |
|
Dimensions/Width: | 3.99 mm |
|
Dimensions/Height: | 1.5 mm |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -40℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRS4427STR
|
Infineon | 完全替代 | SOIC |
INFINEON AUIRS4427STR 芯片, MOSFET低压侧驱动器, 双通道, SO8
|
||
AUIRS4427STR
|
International Rectifier | 完全替代 | SOIC-8 |
INFINEON AUIRS4427STR 芯片, MOSFET低压侧驱动器, 双通道, SO8
|
||
IRS4427STRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRS4427STRPBF 芯片, 场效应管, MOSFET/晶体管, IGBT 驱动器, 低压侧, SOT-23-5 新
|
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