Technical parameters/rated voltage (DC): | 415 V |
|
Technical parameters/rated current: | 5.00 mA |
|
Technical parameters/number of channels: | 1 |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 2500 mW |
|
Technical parameters/drain source voltage (Vds): | 415 V |
|
Technical parameters/Continuous drain current (Ids): | 5.00 mA |
|
Technical parameters/operating temperature (Max): | 85 ℃ |
|
Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223-3 |
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Dimensions/Packaging: | SOT-223-3 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CPC5603CTR
|
IXYS Semiconductor | 类似代替 | TO-261-4 |
CPC 系列 223-SOT 表面贴装 350 V 5 mA N-沟道 耗尽型 FET
|
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