Technical parameters/rated voltage (DC): 415 V
Technical parameters/rated current: 5.00 mA
Technical parameters/number of channels: 1
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 415 V
Technical parameters/Continuous drain current (Ids): 5.00 mA
Technical parameters/Input capacitance (Ciss): 300pF @0V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 类似代替 | SOT-223-3 |
SOT-223 N-CH 415V 0.005A
|
||
CPC5603C
|
IXYS Semiconductor | 类似代替 | SOT-223-3 |
SOT-223 N-CH 415V 0.005A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review