Technical parameters/number of channels: | 1 |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 150 W |
|
Technical parameters/threshold voltage: | 4 V |
|
Technical parameters/drain source voltage (Vds): | 75 V |
|
Technical parameters/Continuous drain current (Ids): | 78A |
|
Technical parameters/rise time: | 33 ns |
|
Technical parameters/Input capacitance (Ciss): | 5015pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 150 W |
|
Technical parameters/descent time: | 14 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 150W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP13NM60N
|
ST Microelectronics | 类似代替 | TO-220-3 |
N 通道 MDmesh™,600V/650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
||
STP18N55M5
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP18N55M5 功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.18 ohm, 10 V, 4 V
|
||
STP19NM50N
|
ST Microelectronics | 类似代替 | TO-220-3 |
N 通道 MDmesh™,500V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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