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Specification parameters
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Technical parameters/number of channels:

Technical parameters/drain source resistance:

0.28 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

90 W

Technical parameters/threshold voltage:

3 V

Technical parameters/drain source voltage (Vds):

600 V

Technical parameters/Continuous drain current (Ids):

5.50 A

Technical parameters/rise time:

8 ns

Technical parameters/Input capacitance (Ciss):

790pF @50V(Vds)

Technical parameters/rated power (Max):

90 W

Technical parameters/descent time:

10 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

90W (Tc)

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-220-3

Dimensions/Length:

10.4 mm

Dimensions/Width:

4.6 mm

Dimensions/Height:

15.75 mm

Dimensions/Packaging:

TO-220-3

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with the REACH SVHC standard:

No SVHC

Compliant with standard/REACH SVHC version:

2015/12/17

Customs information/ECCN code:

EAR99

Customs Information/Hong Kong Impo

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
STP10NM60N	ST Microelectronics	类似代替	TO-220-3	STMICROELECTRONICS STP10NM60N 功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V	PDF
STP13NM60N	ST Microelectronics	类似代替	TO-220-3	N 通道 MDmesh™，600V/650V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics	PDF
STP18N55M5	ST Microelectronics	类似代替	TO-220-3	STMICROELECTRONICS STP18N55M5 功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.18 ohm, 10 V, 4 V	PDF

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