Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 800 V |
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Technical parameters/Continuous drain current (Ids): | 1.8A |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | DPAK |
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Dimensions/Packaging: | DPAK |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB2N80TM
|
Fairchild | 功能相似 | TO-263-3 |
MOSFET N-CH 800V 2.4A D2PAK
|
||
FQD2N80TF
|
Fairchild | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 800V 1.8A 3Pin(2+Tab) DPAK T/R
|
||
FQD2N80TM
|
Fairchild | 功能相似 | TO-252-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQD2N80TM, 1.8 A, Vds=800 V, 3引脚 DPAK (TO-252)封装
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