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Model FQB2N80TM
Description MOSFET N-CH 800V 2.4A D2PAK
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Brand: Fairchild
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6213) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 800 V

Technical parameters/rated current: 2.40 A

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 3.13W (Ta), 85W (Tc)

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/Continuous drain current (Ids): 2.4A

Technical parameters/Input capacitance (Ciss): 550pF @25V(Vds)

Technical parameters/dissipated power (Max): 3.13W (Ta), 85W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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FQD2N80TM FQD2N80TM Fairchild 功能相似 TO-252-3
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STD3NK80ZT4 STD3NK80ZT4 ST Microelectronics 功能相似 TO-252-3
STMICROELECTRONICS STD3NK80ZT4 功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 3.8 ohm, 10 V, 3.75 V
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