Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 2.50 A
Technical parameters/rated power: 70 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 3.8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 1.25 A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 485pF @25V(Vds)
Technical parameters/rated power (Max): 70 W
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD2N80TF
|
Fairchild | 功能相似 | TO-252-3 |
Trans MOSFET N-CH 800V 1.8A 3Pin(2+Tab) DPAK T/R
|
||
FQD2N80TM
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FQD2N80TM 功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 4.9 ohm, 10 V, 5 V
|
||
STD3NK80Z-1
|
ST Microelectronics | 完全替代 | TO-251-3 |
STMICROELECTRONICS STD3NK80Z-1 功率场效应管, MOSFET, N沟道, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V
|
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