STD3NK80Z-1 In Stock|PDF|Datasheet|Price|Agent[STD3NK80Z-1 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model STD3NK80Z-1

Description STMICROELECTRONICS STD3NK80Z-1 功率场效应管, MOSFET, N沟道, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V

Brand: ST Microelectronics

Packaging TO-251-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	3.8 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	70 W
Technical parameters/threshold voltage:	3.75 V
Technical parameters/drain source voltage (Vds):	800 V
Technical parameters/Continuous drain current (Ids):	1.25 A
Technical parameters/rise time:	27 ns
Technical parameters/Input capacitance (Ciss):	485pF @25V(Vds)
Technical parameters/rated power (Max):	70 W
Technical parameters/descent time:	40 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	70W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-251-3
Dimensions/Length:	6.6 mm
Dimensions/Width:	2.4 mm
Dimensions/Height:	6.2 mm
Dimensions/Packaging:	TO-251-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FQD2N80TF	Fairchild	功能相似	TO-252-3	Trans MOSFET N-CH 800V 1.8A 3Pin(2+Tab) DPAK T/R	PDF
FQD2N80TM	Fairchild	功能相似	TO-252-3	FAIRCHILD SEMICONDUCTOR FQD2N80TM 功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 4.9 ohm, 10 V, 5 V	PDF
STD3NK80ZT4	ST Microelectronics	完全替代	TO-252-3	STMICROELECTRONICS STD3NK80ZT4 功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 3.8 ohm, 10 V, 3.75 V	PDF