Encapsulation parameters/Encapsulation: | SOT-89 |
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Dimensions/Packaging: | SOT-89 |
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Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): | 40V |
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Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): | 32V |
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Other/collector continuous output current ICCollector Current (IC): | 2A |
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Other/Cut off Frequency fTTransmission Frequency (fT): | 100MHz |
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Other/DC current gain hFEDC Current Gain (hFE): | 82~180 |
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Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: | 500mV/0.5V |
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Other/dissipated power PcPower Dissipation: | 500mW/0.5W |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD1766T100P
|
ROHM Semiconductor | 功能相似 | MPT-3 |
双极晶体管 - 双极结型晶体管(BJT) DVR NPN 32V 2A
|
||
2SD1766T100Q
|
ROHM Semiconductor | 功能相似 | MPT-3 |
中等功率晶体管( 32V , 2A ) Medium power transistor (32V, 2A)
|
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