Technical parameters/rated voltage (DC): 32.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2000 mW
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 82 @500mA, 3V
Technical parameters/Maximum current amplification factor (hFE): 82 @500mA, 3V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: MPT-3
External dimensions/length: 4.5 mm
External dimensions/width: 2.5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: MPT-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD1766
|
ROHM Semiconductor | 功能相似 | SOT-89 |
2SD1766 NPN三极管 40V 2A 100MHz 82~180 500mV/0.5V SOT-89/SC-62/MPT3 marking/标记 DBP
|
||
|
|
Kexin | 功能相似 |
2SD1766 NPN三极管 40V 2A 100MHz 82~180 500mV/0.5V SOT-89/SC-62/MPT3 marking/标记 DBP
|
|||
2SD1766T100P
|
ROHM Semiconductor | 类似代替 | MPT-3 |
双极晶体管 - 双极结型晶体管(BJT) DVR NPN 32V 2A
|
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