Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 1.4 W |
|
Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 3.8A |
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Technical parameters/rise time: | 1.5 ns |
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Technical parameters/Input capacitance (Ciss): | 270pF @15V(Vds) |
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Technical parameters/rated power (Max): | 1.4 W |
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Technical parameters/descent time: | 2.5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.4W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AO3418
|
ETC | 完全替代 | SOT-23-3 |
30V,3.8A,N沟道MOSFET
|
||
AO3418
|
Alpha | 完全替代 |
30V,3.8A,N沟道MOSFET
|
|||
SI2316BDS-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
Trans MOSFET N-CH 30V 3.9A 3Pin SOT-23 T/R
|
||
SI2316BDS-T1-GE3
|
Vishay Semiconductor | 功能相似 | TO-236 |
Trans MOSFET N-CH 30V 3.9A 3Pin SOT-23 T/R
|
||
SI2316BDS-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
Trans MOSFET N-CH 30V 3.9A 3Pin SOT-23 T/R
|
||
SI2316BDS-T1-GE3
|
VISHAY | 功能相似 | SOT-23-3 |
Trans MOSFET N-CH 30V 3.9A 3Pin SOT-23 T/R
|
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