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Model SI2316BDS-T1-GE3
Description VISHAY SI2316BDS-T1-GE3 Field effect transistor, MOSFET, N-channel, 30V, 4.5A, TO-236
Product QR code
Brand: Vishay Semiconductor
Packaging TO-236
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.32  yuan 1.32yuan
5+:
$ 1.7861
25+:
$ 1.6538
50+:
$ 1.5611
100+:
$ 1.5215
500+:
$ 1.4950
2500+:
$ 1.4619
5000+:
$ 1.4487
10000+:
$ 1.4288
Quantity
5+
25+
50+
100+
500+
Price
$1.7861
$1.6538
$1.5611
$1.5215
$1.4950
Price $ 1.7861 $ 1.6538 $ 1.5611 $ 1.5215 $ 1.4950
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6224) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.08 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 4.50 A

Technical parameters/Input capacitance (Ciss): 350pF @15V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1250 mW

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-236

External dimensions/height: 1.02 mm

External dimensions/packaging: TO-236

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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