Technical parameters/Input capacitance (Ciss): | 650pF @25V(Vds) |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 22000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 16 |
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Encapsulation parameters/Encapsulation: | LCC-4 |
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Dimensions/Packaging: | LCC-4 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semelab | 功能相似 | LCC-4 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
||
IRFE130
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
|||
IRFE130
|
Infineon | 功能相似 | LLCC |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
||
JANTX2N6796U
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
|||
JANTX2N6796U
|
Infineon | 功能相似 | LLCC |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
||
JANTXV2N6796
|
Semicoa Semiconductor | 功能相似 | TO-39 |
Trans MOSFET N-CH 100V 8A 3Pin TO-39
|
||
JANTXV2N6796
|
International Rectifier | 功能相似 | TO-39 |
Trans MOSFET N-CH 100V 8A 3Pin TO-39
|
||
|
|
Microchip | 功能相似 |
MOSFET N-CH 100V 8A
|
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