Technical parameters/drain source resistance: 180 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 25 W
Technical parameters/product series: IRFE130
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Package parameters/number of pins: 18
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Semelab | 功能相似 | LCC-4 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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||
IRFE130
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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IRFE130
|
Infineon | 功能相似 | LLCC |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
||
JANTX2N6796U
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
|||
JANTX2N6796U
|
Infineon | 功能相似 | LLCC |
Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
||
JANTXV2N6796
|
Semicoa Semiconductor | 功能相似 | TO-39 |
Trans MOSFET N-CH 100V 8A 3Pin TO-39
|
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JANTXV2N6796
|
International Rectifier | 功能相似 | TO-39 |
Trans MOSFET N-CH 100V 8A 3Pin TO-39
|
||
|
|
Microchip | 功能相似 |
MOSFET N-CH 100V 8A
|
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