Technical parameters/rated power: | 2 W |
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Technical parameters/number of channels: | 2 |
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Technical parameters/drain source resistance: | 46 mΩ |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30 V |
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Technical parameters/Continuous drain current (Ids): | 6.5A |
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Technical parameters/rise time: | 8.9 ns |
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Technical parameters/Input capacitance (Ciss): | 650pF @25V(Vds) |
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Technical parameters/descent time: | 17 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.75 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF7313QTR
|
Infineon | 类似代替 | SOIC-8 |
INFINEON AUIRF7313QTR 双路场效应管, MOSFET, AEC-Q101, 双N沟道, 6.9 A, 30 V, 0.023 ohm, 10 V, 3 V 新
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