Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.023 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 2.4 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 6.9A
Technical parameters/rise time: 7.3 ns
Technical parameters/Input capacitance (Ciss): 755pF @25V(Vds)
Technical parameters/rated power (Max): 2.4 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.4 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF7313Q
|
International Rectifier | 类似代替 | SOIC-8 |
SOIC N-CH 30V 6.9A
|
||
|
|
Infineon | 类似代替 | SOIC-8 |
SOIC N-CH 30V 6.5A
|
||
IRF7313QTRPBF
|
International Rectifier | 类似代替 | SO-8 |
SOIC N-CH 30V 6.5A
|
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