Technical parameters/voltage regulation value: | 6.8 V |
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Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | SOD-80 |
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Dimensions/Height: | 3.7 mm |
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Dimensions/Packaging: | SOD-80 |
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Physical parameters/temperature coefficient: | 3 mV/℃ |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZV55-B6V8
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Nexperia | 类似代替 | SOD-80 |
齐纳二极管 500mW,BZV55 系列,NXP Semiconductors NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,NXP Semiconductors
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General Semiconductor | 类似代替 |
齐纳二极管 500mW,BZV55 系列,NXP Semiconductors NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,NXP Semiconductors
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Good-Ark Electronics | 类似代替 |
齐纳二极管 500mW,BZV55 系列,NXP Semiconductors NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,NXP Semiconductors
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Fagor Electronica | 类似代替 | Mini-MELF |
齐纳二极管 500mW,BZV55 系列,NXP Semiconductors NXP 500mW 表面安装 (SMT) 齐纳二极管,具有较宽的击穿电压范围。 ### 齐纳二极管,NXP Semiconductors
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