Technical parameters/frequency: | 150 MHz |
|
Technical parameters/rated power: | 2 W |
|
Technical parameters/dissipated power: | 2000 mW |
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Technical parameters/gain bandwidth product: | 125 MHz |
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Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 2V |
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Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 2 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Height: | 1.65 mm |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP52-16
|
Nexperia | 功能相似 | SOT-223 |
低功率PNP晶体管 LOW POWER PNP TRANSISTOR
|
||
BCP52-16
|
Infineon | 功能相似 | SOT-223-4 |
低功率PNP晶体管 LOW POWER PNP TRANSISTOR
|
||
BCP52-16
|
Philips | 功能相似 | SOT-223 |
低功率PNP晶体管 LOW POWER PNP TRANSISTOR
|
||
BCP52-16,115
|
NXP | 功能相似 | TO-261-4 |
NXP BCP52-16,115 , PNP 晶体管, 1 A, Vce=60 V, HFE:100, 145 MHz, 3 + Tab引脚 SOT-223封装
|
||
|
|
Philips | 功能相似 | SC-73 |
NXP BCP52-16,115 , PNP 晶体管, 1 A, Vce=60 V, HFE:100, 145 MHz, 3 + Tab引脚 SOT-223封装
|
||
BCP52-16,115
|
Nexperia | 功能相似 | TO-261-4 |
NXP BCP52-16,115 , PNP 晶体管, 1 A, Vce=60 V, HFE:100, 145 MHz, 3 + Tab引脚 SOT-223封装
|
||
DCP52-16-13
|
Diodes | 类似代替 | TO-261-4 |
Trans GP BJT PNP 60V 1A 4Pin(3+Tab) SOT-223 T/R
|
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